High Performance CdTeSe Thin-Film Solar Cells: Effects of Band Gap Profiles

Sean Meng, Yanfa Yan


Device modeling and simulation studies of a CdTeSe thin film solar cell are performed. A variety of band gap profiles, including ungraded, front graded, back graded, and double graded profiles of the CdTeSe absorber layer are examined. The performance characteristics of these band gap profiles and their spectral responses to energy distribution of the incident spectrum are analyzed. The calculation reveals that single junction cells with band gap at the optimum value of 1.38 eV exhibit the maximum performance; alloys of CdTe and CdSe with a ratio of 1:1 forming CdTe0.5Se0.5 achieve the band gap of 1.38 eV due to the bowing effect. The benefits of the band gap grading are evaluated when the minimum band gap is set at the optimum band gap of 1.38 eV. The back graded band gap profiles exhibit an increase in efficiency, while most of other graded profiles reduce performances. The best performance profile for CdTeSe absorber is achieved under AM1.5 Global spectrum. This optimum profile also exhibits the best performance under the high AM/turbidity solar irradiance spectra.


CdTe,CdTeSe, Thin Film, Solar cell, Band gap structures, Band-gap grading

Full Text:



  • There are currently no refbacks.


ISSN: 2454-7042

Copyright © 2016 by Global Publishing Corporation

For any Technical Support contact us at gjpeditor@gmail.com, editor@gpcpublishing.org.